MOSFET N-CH 800V 4.1A TO220AB | Vishay Siliconix
N-Channel 800 V 4.1A (Tc) 125W (Tc) Through Hole TO-220AB
Images may differ 
Unit Price ($ / pc.)
0.453565 $
*
Available: 862 pcs.
Next delivery: 17052 pcs.
Available in 8 Weeks
Manufacturer Leadtime: 8 Weeks **
Quantity
Price per unit*
100 pcs.
0.430887 $
500 pcs.
0.408209 $
1000 pcs.
0.38553 $
3000 pcs.
0.362852 $
10000 pcs.
0.340174 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRFBE30PBF is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by Vishay Siliconix made. The IRFBE30PBF is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 2.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 78 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1300 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 125W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-220AB |
| Package / Case | TO-220-3 |
| Base Product Number | IRFBE30 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search