MOSFET N-CH 100V 1A 4DIP | Vishay Siliconix
N-Channel 100 V 1A (Ta) 1.3W (Ta) Through Hole 4-HVMDIP
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Unit Price ($ / pc.)
0.3475 $
*
Available: 862 pcs.
Next delivery: 17052 pcs.
Available in 8 Weeks
Manufacturer Leadtime: 10 Weeks **
Quantity
Price per unit*
100 pcs.
0.330125 $
500 pcs.
0.31275 $
1000 pcs.
0.295375 $
3000 pcs.
0.278 $
10000 pcs.
0.260625 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The IRLD110PBF is a common industry Single FETs, MOSFETs housed in a RoHS compliant 4-DIP (0.300", 7.62mm) package by Vishay Siliconix made. The IRLD110PBF is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | - |
| Package | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 1A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4V, 5V |
| Rds On (Max) @ Id, Vgs | 540mOhm @ 600mA, 5V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 6.1 nC @ 5 V |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | 4-HVMDIP |
| Package / Case | 4-DIP (0.300", 7.62mm) |
| Base Product Number | IRLD110 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 100 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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