MOSFET N-CH 650V 19A TO220-3 | onsemi

N-Channel 650 V 19A (Tc) 154W (Tc) Through Hole TO-220-3

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Unit Price ($ / pc.)
$ *
Available: 913 pcs.
Next delivery: 18123 pcs.
Available in 8 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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Description

The FCP165N65S3 is a common industry Single FETs, MOSFETs housed in a RoHS compliant TO-220-3 package by onsemi made. The FCP165N65S3 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
SeriesSuperFET III
PackageTube
Product StatusNot For New Designs
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)650 V
Current - Continuous Drain (Id) @ 25°C19A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs165mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id4.5V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs39 nC @ 10 V
Vgs (Max)±30V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 400 V
FET Feature-
Power Dissipation (Max)154W (Tc)
Operating Temperature-55°C ~ 150°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220-3
Package / CaseTO-220-3
Base Product NumberFCP165
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes