GANFET N-CH 600V 12.5A 8HSOF | Infineon Technologies
N-Channel 600 V 12.5A (Tc) 55.5W (Tc) Surface Mount PG-HSOF-8-3
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Available: 1018 pcs.
Next delivery: 20328 pcs.
Available in 9 Weeks
Manufacturer Leadtime: **
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Description
The IGT60R190D1SATMA1 is a common industry Single FETs, MOSFETs housed in a RoHS compliant 8-PowerSFN package by Infineon Technologies made. The IGT60R190D1SATMA1 is using SPQ 2000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolGaN |
| Package | Tape & Reel (TR) |
| Product Status | Obsolete |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 600 V |
| Current - Continuous Drain (Id) @ 25°C | 12.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | - |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.6V @ 960μA |
| Vgs (Max) | -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 157 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 55.5W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Supplier Device Package | PG-HSOF-8-3 |
| Package / Case | 8-PowerSFN |
| Base Product Number | IGT60R190 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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