IGBT 600V 10A 60W TO220SM | Toshiba Semiconductor and Storage
IGBT 600 V 10 A 60 W Through Hole
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Available: 256 pcs.
Next delivery: 4326 pcs.
Manufacturer Leadtime: **
Description
The GT10J312(Q) is a common industry Single IGBTs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Toshiba Semiconductor and Storage made. The GT10J312(Q) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
| Current - Collector (Ic) (Max) | 10 A |
| Current - Collector Pulsed (Icm) | 20 A |
| Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 10A |
| Power - Max | 60 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | 400ns/400ns |
| Test Condition | 300V, 10A, 100Ohm, 15V |
| Reverse Recovery Time (trr) | 200 ns |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Supplier Device Package | - |
| Base Product Number | GT10J312 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 50 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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GT10J312(Q) specification