IGBT 600V 10A 60W TO220SM | Toshiba Semiconductor and Storage

IGBT 600 V 10 A 60 W Through Hole

default L
Images may differ 
Unit Price ($ / pc.)
$ *
Available: 256 pcs.
Next delivery: 4326 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The GT10J312(Q) is a common industry Single IGBTs housed in a RoHS compliant TO-262-3 Long Leads, I2PAK, TO-262AA package by Toshiba Semiconductor and Storage made. The GT10J312(Q) is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)10 A
Current - Collector Pulsed (Icm)20 A
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 10A
Power - Max60 W
Switching Energy-
Input TypeStandard
Td (on/off) @ 25°C400ns/400ns
Test Condition300V, 10A, 100Ohm, 15V
Reverse Recovery Time (trr)200 ns
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
Supplier Device Package-
Base Product NumberGT10J312
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes