IGBT 1000V 60A 170W TO3P LH | Toshiba Semiconductor and Storage

IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)

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Unit Price ($ / pc.)
$ *
Available: 256 pcs.
Next delivery: 4326 pcs.
Available in 2 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
0 $
500 pcs.
0 $
1000 pcs.
0 $
3000 pcs.
0 $
10000 pcs.
0 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The GT60N321(Q) is a common industry Single IGBTs housed in a RoHS compliant TO-3PL package by Toshiba Semiconductor and Storage made. The GT60N321(Q) is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusObsolete
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)1000 V
Current - Collector (Ic) (Max)60 A
Current - Collector Pulsed (Icm)120 A
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 60A
Power - Max170 W
Switching Energy-
Input TypeStandard
Td (on/off) @ 25°C330ns/700ns
Test Condition-
Reverse Recovery Time (trr)2.5 μs
Operating Temperature150°C (TJ)
Mounting TypeThrough Hole
Package / CaseTO-3PL
Supplier Device PackageTO-3P(LH)
Base Product NumberGT60N321
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 100 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes