IGBT 1000V 60A 170W TO3P LH | Toshiba Semiconductor and Storage
IGBT 1000 V 60 A 170 W Through Hole TO-3P(LH)
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Available: 256 pcs.
Next delivery: 4326 pcs.
Manufacturer Leadtime: **
Description
The GT60N321(Q) is a common industry Single IGBTs housed in a RoHS compliant TO-3PL package by Toshiba Semiconductor and Storage made. The GT60N321(Q) is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tube |
| Product Status | Obsolete |
| IGBT Type | - |
| Voltage - Collector Emitter Breakdown (Max) | 1000 V |
| Current - Collector (Ic) (Max) | 60 A |
| Current - Collector Pulsed (Icm) | 120 A |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 60A |
| Power - Max | 170 W |
| Switching Energy | - |
| Input Type | Standard |
| Td (on/off) @ 25°C | 330ns/700ns |
| Test Condition | - |
| Reverse Recovery Time (trr) | 2.5 μs |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-3PL |
| Supplier Device Package | TO-3P(LH) |
| Base Product Number | GT60N321 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 100 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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GT60N321(Q) specification