IGBT 600V 30A 170W TO3PN | Toshiba Semiconductor and Storage

IGBT 600 V 30 A 170 W Through Hole TO-3P(N)

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Unit Price ($ / pc.)
0.7625 $ *
Available: 256 pcs.
Next delivery: 4326 pcs.
Available in 2 Weeks
Manufacturer Leadtime: 18 Weeks **
Quantity
Price per unit*
100 pcs.
0.724375 $
500 pcs.
0.68625 $
1000 pcs.
0.648125 $
3000 pcs.
0.61 $
10000 pcs.
0.571875 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The GT30J121(Q) is a common industry Single IGBTs housed in a RoHS compliant TO-3P-3, SC-65-3 package by Toshiba Semiconductor and Storage made. The GT30J121(Q) is using SPQ 100 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusActive
IGBT Type-
Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)30 A
Current - Collector Pulsed (Icm)60 A
Vce(on) (Max) @ Vge, Ic2.45V @ 15V, 30A
Power - Max170 W
Switching Energy1mJ (on), 800μJ (off)
Input TypeStandard
Td (on/off) @ 25°C90ns/300ns
Test Condition300V, 30A, 24Ohm, 15V
Mounting TypeThrough Hole
Package / CaseTO-3P-3, SC-65-3
Supplier Device PackageTO-3P(N)
Base Product NumberGT30J121
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 100 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes