DIODE SIL CARB 650V 4A TO220-2L | Toshiba Semiconductor and Storage

Diode 650 V 4A Through Hole TO-220-2L

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Unit Price ($ / pc.)
0.4875 $ *
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.463125 $
500 pcs.
0.43875 $
1000 pcs.
0.414375 $
3000 pcs.
0.39 $
10000 pcs.
0.365625 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The TRS4E65F,S1Q is a common industry Single Diodes housed in a RoHS compliant TO-220-2 package by Toshiba Semiconductor and Storage made. The TRS4E65F,S1Q is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTube
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If1.6 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr20 μA @ 650 V
Capacitance @ Vr, F16pF @ 650V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackageTO-220-2L
Operating Temperature - Junction175°C (Max)
Base Product NumberTRS4E65
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
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