DIODE SIL CARB 600V 4A WAFER | Infineon Technologies
Diode 600 V 4A Surface Mount Sawn on foil
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Unit Price ($ / pc.)
$
*
Available: 178 pcs.
Next delivery: 2688 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
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**Subject to prior sale
Description
The SIDC11D60SIC3 is a common industry Single Diodes housed in a RoHS compliant Die package by Infineon Technologies made. The SIDC11D60SIC3 is using SPQ 3459 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| Product Status | Discontinued |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.9 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 200 μA @ 600 V |
| Capacitance @ Vr, F | 150pF @ 1V, 1MHz |
| Mounting Type | Surface Mount |
| Package / Case | Die |
| Supplier Device Package | Sawn on foil |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | SIDC11 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3459 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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