DIODE SIL CARB 650V 4A TO220-2-2 | Infineon Technologies
Diode 650 V 4A Through Hole PG-TO220-2-2
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Available: 418 pcs.
Next delivery: 7728 pcs.
Manufacturer Leadtime: **
Description
The IDH04G65C5XKSA1 is a common industry Single Diodes housed in a RoHS compliant TO-220-2 package by Infineon Technologies made. The IDH04G65C5XKSA1 is using SPQ 500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | CoolSiC+ |
| Package | Tube |
| Product Status | Discontinued |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 4A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 140 μA @ 650 V |
| Capacitance @ Vr, F | 130pF @ 1V, 1MHz |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Supplier Device Package | PG-TO220-2-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Base Product Number | IDH04G65 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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