DIODE SIL CARB 650V 4A TO220-2-1 | Infineon Technologies

Diode 650 V 4A Through Hole PG-TO220-2-1

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Unit Price ($ / pc.)
0.454375 $ *
Available: 720 pcs.
Next delivery: 14070 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 20 Weeks **
Quantity
Price per unit*
100 pcs.
0.431656 $
500 pcs.
0.408938 $
1000 pcs.
0.386219 $
3000 pcs.
0.3635 $
10000 pcs.
0.340781 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The IDH04G65C5XKSA2 is a common industry Single Diodes housed in a RoHS compliant TO-220-2 package by Infineon Technologies made. The IDH04G65C5XKSA2 is using SPQ 50 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrInfineon Technologies
SeriesCoolSiC+
PackageTube
Product StatusActive
TechnologySiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max)650 V
Current - Average Rectified (Io)4A
Voltage - Forward (Vf) (Max) @ If1.7 V @ 4 A
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
Current - Reverse Leakage @ Vr70 μA @ 650 V
Capacitance @ Vr, F130pF @ 1V, 1MHz
Mounting TypeThrough Hole
Package / CaseTO-220-2
Supplier Device PackagePG-TO220-2-1
Operating Temperature - Junction-55°C ~ 175°C
Base Product NumberIDH04G65
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 50 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes