RF SIGE NPN BIPOLAR TRANSISTOR N | Toshiba Semiconductor and Storage
RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM
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Unit Price ($ / pc.)
0.10395 $
*
Available: 152 pcs.
Next delivery: 2142 pcs.
Manufacturer Leadtime: 12 Weeks **
Description
The MT3S111TU,LF is a common industry Bipolar RF Transistors housed in a RoHS compliant 3-SMD, Flat Lead package by Toshiba Semiconductor and Storage made. The MT3S111TU,LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | NPN |
Voltage - Collector Emitter Breakdown (Max) | 6V |
Frequency - Transition | 10GHz |
Noise Figure (dB Typ @ f) | 0.6dB ~ 0.85dB @ 500MHz ~ 1GHz |
Gain | 12.5dB |
Power - Max | 800mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 30mA, 5V |
Current - Collector (Ic) (Max) | 100mA |
Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 3-SMD, Flat Lead |
Supplier Device Package | UFM |
Base Product Number | MT3S111 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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MT3S111TU,LF specification