RF SIGE NPN BIPOLAR TRANSISTOR N | Toshiba Semiconductor and Storage

RF Transistor NPN 6V 100mA 10GHz 800mW Surface Mount UFM

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Unit Price ($ / pc.)
0.10395 $ *
Available: 152 pcs.
Next delivery: 2142 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 12 Weeks **
Quantity
Price per unit*
100 pcs.
0.098753 $
500 pcs.
0.093555 $
1000 pcs.
0.088358 $
3000 pcs.
0.08316 $
10000 pcs.
0.077963 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The MT3S111TU,LF is a common industry Bipolar RF Transistors housed in a RoHS compliant 3-SMD, Flat Lead package by Toshiba Semiconductor and Storage made. The MT3S111TU,LF is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageTape & Reel (TR)
Product StatusActive
Transistor TypeNPN
Voltage - Collector Emitter Breakdown (Max)6V
Frequency - Transition10GHz
Noise Figure (dB Typ @ f)0.6dB ~ 0.85dB @ 500MHz ~ 1GHz
Gain12.5dB
Power - Max800mW
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 30mA, 5V
Current - Collector (Ic) (Max)100mA
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Package / Case3-SMD, Flat Lead
Supplier Device PackageUFM
Base Product NumberMT3S111
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 3000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes