MOSFET 2N-CH 30V 23.7A 8PWRPAIR | Vishay Siliconix
Mosfet Array 30V 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) Surface Mount 8-PowerPair (6x5)
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Unit Price ($ / pc.)
0.169825 $
*
Available: 175 pcs.
Next delivery: 2625 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 14 Weeks **
Quantity
Price per unit*
100 pcs.
0.161334 $
500 pcs.
0.152843 $
1000 pcs.
0.144351 $
3000 pcs.
0.13586 $
10000 pcs.
0.127369 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIZ998BDT-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant 8-PowerWDFN package by Vishay Siliconix made. The SIZ998BDT-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual), Schottky |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V, 46.7nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 790pF @ 15V, 2130pF @ 15V |
| Power - Max | 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair (6x5) |
| Base Product Number | SIZ998 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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