MOSFET 2N-CH 20V 2A 6TSOP | Vishay Siliconix
Mosfet Array 20V 2A 830mW Surface Mount 6-TSOP
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Unit Price ($ / pc.)
0.175335 $
*
Available: 294 pcs.
Next delivery: 5124 pcs.
Manufacturer Leadtime: 11 Weeks **
Description
The SI3900DV-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant SOT-23-6 Thin, TSOT-23-6 package by Vishay Siliconix made. The SI3900DV-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 2A |
Rds On (Max) @ Id, Vgs | 125mOhm @ 2.4A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 830mW |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package | 6-TSOP |
Base Product Number | SI3900 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SI3900DV-T1-GE3 ECAD module
SI3900DV-T1-GE3 datesheet
SI3900DV-T1-GE3 specification
SI3900DV-T1-GE3 certificate
SI3900DV-T1-GE3 component
SI3900DV-T1-GE3 substitute
SI3900DV-T1-GE3 packaging