MOSFET 2N-CH 20V 1.5A SC75-6L | Vishay Siliconix
Mosfet Array 20V 1.5A 3.1W Surface Mount PowerPAK SC-75-6L Dual
Images may differ
Available: 294 pcs.
Next delivery: 5124 pcs.
Manufacturer Leadtime: **
Description
The SIB900EDK-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant PowerPAK SC-75-6L Dual package by Vishay Siliconix made. The SIB900EDK-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 N-Channel (Dual) |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 1.5A |
Rds On (Max) @ Id, Vgs | 225mOhm @ 1.6A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 1.7nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 3.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK SC-75-6L Dual |
Supplier Device Package | PowerPAK SC-75-6L Dual |
Base Product Number | SIB900 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
Search
SIB900EDK-T1-GE3 ECAD module
SIB900EDK-T1-GE3 datesheet
SIB900EDK-T1-GE3 specification
SIB900EDK-T1-GE3 certificate
SIB900EDK-T1-GE3 supplier
SIB900EDK-T1-GE3 component
SIB900EDK-T1-GE3 substitute
SIB900EDK-T1-GE3 packaging