MOSFET N/P-CH 20V 3.1A 1206-8 | Vishay Siliconix
Mosfet Array 20V 3.1A, 2.1A 1.1W Surface Mount 1206-8 ChipFET
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Available: 312 pcs.
Next delivery: 5502 pcs.
Manufacturer Leadtime: **
Description
The SI5513DC-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant 8-SMD, Flat Lead package by Vishay Siliconix made. The SI5513DC-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET |
Package | Tape & Reel (TR) |
Product Status | Obsolete |
Technology | MOSFET (Metal Oxide) |
Configuration | N and P-Channel |
FET Feature | Logic Level Gate |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 3.1A, 2.1A |
Rds On (Max) @ Id, Vgs | 75mOhm @ 3.1A, 4.5V |
Vgs(th) (Max) @ Id | 1.5V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
Input Capacitance (Ciss) (Max) @ Vds | - |
Power - Max | 1.1W |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 8-SMD, Flat Lead |
Supplier Device Package | 1206-8 ChipFET |
Base Product Number | SI5513 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SI5513DC-T1-GE3 ECAD module
SI5513DC-T1-GE3 datesheet
SI5513DC-T1-GE3 specification
SI5513DC-T1-GE3 certificate
SI5513DC-T1-GE3 component
SI5513DC-T1-GE3 substitute
SI5513DC-T1-GE3 packaging