SIC 2N-CH 1200V 204A MODULE | Rohm Semiconductor

Mosfet Array 1200V (1.2kV) 204A (Tc) 1130W Module

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Unit Price ($ / pc.)
227.204585 $ *
Available: 422 pcs.
Next delivery: 7812 pcs.
Available in 3 Weeks
Manufacturer Leadtime: 17 Weeks **
Quantity
Price per unit*
100 pcs.
215.844356 $
500 pcs.
204.484127 $
1000 pcs.
193.123897 $
3000 pcs.
181.763668 $
10000 pcs.
170.403439 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSM180D12P2C101 is a common industry FET, MOSFET Arrays housed in a RoHS compliant Module package by Rohm Semiconductor made. The BSM180D12P2C101 is using SPQ 12 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRohm Semiconductor
Series-
PackageBulk
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Half Bridge)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C204A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10V
Power - Max1130W
Operating Temperature-40°C ~ 150°C (TJ)
Package / CaseModule
Supplier Device PackageModule
Base Product NumberBSM180
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 12 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes