SIC 2N-CH 1200V 180A MODULE | Rohm Semiconductor

Mosfet Array 1200V (1.2kV) 180A (Tc) 880W Surface Mount Module

default L
Images may differ 
Unit Price ($ / pc.)
291.275415 $ *
Available: 626 pcs.
Next delivery: 12096 pcs.
Available in 5 Weeks
Manufacturer Leadtime: 17 Weeks **
Quantity
Price per unit*
100 pcs.
276.711644 $
500 pcs.
262.147874 $
1000 pcs.
247.584103 $
3000 pcs.
233.020332 $
10000 pcs.
218.456561 $
*incl. VAT plus shipping costs
**Subject to prior sale
Description

The BSM180D12P3C007 is a common industry FET, MOSFET Arrays housed in a RoHS compliant Module package by Rohm Semiconductor made. The BSM180D12P3C007 is using SPQ 12 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrRohm Semiconductor
Series-
PackageBulk
Product StatusActive
TechnologySilicon Carbide (SiC)
Configuration2 N-Channel (Dual)
FET Feature-
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C180A (Tc)
Rds On (Max) @ Id, Vgs-
Vgs(th) (Max) @ Id5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs-
Input Capacitance (Ciss) (Max) @ Vds900pF @ 10V
Power - Max880W
Operating Temperature175°C (TJ)
Mounting TypeSurface Mount
Package / CaseModule
Supplier Device PackageModule
Base Product NumberBSM180
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 12 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes
Previous
FDMS8095AC