GANFET 2N-CH 120V 3.4A DIE | EPC
Mosfet Array 120V 3.4A Die
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Unit Price ($ / pc.)
0.51712 $
*
Available: 667 pcs.
Next delivery: 12957 pcs.
Available in 6 Weeks
Manufacturer Leadtime: 16 Weeks **
Quantity
Price per unit*
100 pcs.
0.491264 $
500 pcs.
0.465408 $
1000 pcs.
0.439552 $
3000 pcs.
0.413696 $
10000 pcs.
0.38784 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The EPC2110 is a common industry FET, MOSFET Arrays housed in a RoHS compliant Die package by EPC made. The EPC2110 is using SPQ 2500 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | EPC |
| Series | eGaN |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | GaNFET (Gallium Nitride) |
| Configuration | 2 N-Channel (Dual) Common Source |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 120V |
| Current - Continuous Drain (Id) @ 25°C | 3.4A |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
| Vgs(th) (Max) @ Id | 2.5V @ 700μA |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| Power - Max | - |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Package / Case | Die |
| Supplier Device Package | Die |
| Base Product Number | EPC211 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 2500 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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