MOSFET 2P-CH 20V 6A PPAK 1212 | Vishay Siliconix
Mosfet Array 20V 6A (Tc) 2.6W (Ta), 23W (Tc) Surface Mount PowerPAK 1212-8 Dual
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Unit Price ($ / pc.)
0.17753 $
*
Available: 907 pcs.
Next delivery: 17997 pcs.
Manufacturer Leadtime: 18 Weeks **
Description
The SIS903DN-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant PowerPAK 1212-8 Dual package by Vishay Siliconix made. The SIS903DN-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Vishay Siliconix |
Series | TrenchFET Gen III |
Package | Tape & Reel (TR) |
Product Status | Active |
Technology | MOSFET (Metal Oxide) |
Configuration | 2 P-Channel (Dual) |
FET Feature | - |
Drain to Source Voltage (Vdss) | 20V |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
Rds On (Max) @ Id, Vgs | 20.1mOhm @ 5A, 4.5V |
Vgs(th) (Max) @ Id | 1V @ 250μA |
Gate Charge (Qg) (Max) @ Vgs | 42nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds | 2565pF @ 10V |
Power - Max | 2.6W (Ta), 23W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | PowerPAK 1212-8 Dual |
Supplier Device Package | PowerPAK 1212-8 Dual |
Base Product Number | SIS903 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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SIS903DN-T1-GE3 ECAD module
SIS903DN-T1-GE3 datesheet
SIS903DN-T1-GE3 specification
SIS903DN-T1-GE3 certificate
SIS903DN-T1-GE3 component
SIS903DN-T1-GE3 substitute
SIS903DN-T1-GE3 packaging