MOSFET 2N-CH 30V 22A 8POWERPAIR | Vishay Siliconix
Mosfet Array 30V 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) 4.3W (Ta), 33W (Tc) Surface Mount 8-PowerPair (3.3x3.3)
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Unit Price ($ / pc.)
0.18598 $
*
Available: 1002 pcs.
Next delivery: 19992 pcs.
Available in 9 Weeks
Manufacturer Leadtime: 50 Weeks **
Quantity
Price per unit*
100 pcs.
0.176681 $
500 pcs.
0.167382 $
1000 pcs.
0.158083 $
3000 pcs.
0.148784 $
10000 pcs.
0.139485 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The SIZ200DT-T1-GE3 is a common industry FET, MOSFET Arrays housed in a RoHS compliant 8-PowerWDFN package by Vishay Siliconix made. The SIZ200DT-T1-GE3 is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Vishay Siliconix |
| Series | TrenchFET Gen IV |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | - |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc) |
| Rds On (Max) @ Id, Vgs | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 250μA |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V, 30nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1510pF @ 15V, 1600pF @ 15V |
| Power - Max | 4.3W (Ta), 33W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Supplier Device Package | 8-PowerPair (3.3x3.3) |
| Base Product Number | SIZ200 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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