TRANS PREBIAS NPN 50V 0.1A SSM | Toshiba Semiconductor and Storage
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 100 mW Surface Mount SSM
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Unit Price ($ / pc.)
0.010505 $
*
Available: 164 pcs.
Next delivery: 2394 pcs.
Manufacturer Leadtime: 42 Weeks **
Description
The RN1112(TE85L,F) is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant SC-75, SOT-416 package by Toshiba Semiconductor and Storage made. The RN1112(TE85L,F) is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | Toshiba Semiconductor and Storage |
Series | - |
Package | Tape & Reel (TR) |
Product Status | Active |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100 mA |
Voltage - Collector Emitter Breakdown (Max) | 50 V |
Resistor - Base (R1) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250 MHz |
Power - Max | 100 mW |
Mounting Type | Surface Mount |
Package / Case | SC-75, SOT-416 |
Supplier Device Package | SSM |
Base Product Number | RN1112 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 3000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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