TRANS PREBIAS NPN 40V TO92-3 | NXP USA Inc.
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 800 mA 700 mW Through Hole TO-92-3
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Available: 219 pcs.
Next delivery: 3549 pcs.
Manufacturer Leadtime: **
Description
The PBRN113ES,126 is a common industry Single, Pre-Biased Bipolar Transistors housed in a RoHS compliant TO-226-3, TO-92-3 (TO-226AA) Formed Leads package by NXP USA Inc. made. The PBRN113ES,126 is using SPQ 2000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
Mfr | NXP USA Inc. |
Series | - |
Package | Tape & Box (TB) |
Product Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 800 mA |
Voltage - Collector Emitter Breakdown (Max) | 40 V |
Resistor - Base (R1) | 1 kOhms |
Resistor - Emitter Base (R2) | 1 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 300mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 1.15V @ 8mA, 800mA |
Current - Collector Cutoff (Max) | 500nA |
Power - Max | 700 mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package | TO-92-3 |
Base Product Number | PBRN113 |
Logistics
Country of origin | HK |
Customs tariff number | - |
Original Packaging | Reel with 2000 pieces |
Compliance
RoHS conform | Yes |
HTSUS | 8504.40.9580 |
SVHC free | Yes |
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PBRN113ES,126 specification
PBRN113ES,126 certificate