NPN + PNP BRT Q1BSR=4.7KOHM Q1BE | Toshiba Semiconductor and Storage
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz, 200MHz 200mW Surface Mount US6
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Unit Price ($ / pc.)
0.02004 $
*
Available: 164 pcs.
Next delivery: 2394 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 12 Weeks **
Quantity
Price per unit*
100 pcs.
0.019038 $
500 pcs.
0.018036 $
1000 pcs.
0.017034 $
3000 pcs.
0.016032 $
10000 pcs.
0.01503 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The RN4990(TE85L,F) is a common industry Bipolar Transistor Arrays, Pre-Biased housed in a RoHS compliant 6-TSSOP, SC-88, SOT-363 package by Toshiba Semiconductor and Storage made. The RN4990(TE85L,F) is using SPQ 3000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Transistor Type | 1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 4.7kOhms |
| Resistor - Emitter Base (R2) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz, 200MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | US6 |
| Base Product Number | RN4990 |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 3000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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