NPN X 2 BRT Q1BSR=47KOHM Q1BER=2 | Toshiba Semiconductor and Storage
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV
Images may differ 
Unit Price ($ / pc.)
0.02327 $
*
Available: 164 pcs.
Next delivery: 2394 pcs.
Available in 1 Weeks
Manufacturer Leadtime: 32 Weeks **
Quantity
Price per unit*
100 pcs.
0.022107 $
500 pcs.
0.020943 $
1000 pcs.
0.01978 $
3000 pcs.
0.018616 $
10000 pcs.
0.017453 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The RN1709JE(TE85L,F) is a common industry Bipolar Transistor Arrays, Pre-Biased housed in a RoHS compliant SOT-553 package by Toshiba Semiconductor and Storage made. The RN1709JE(TE85L,F) is using SPQ 4000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Toshiba Semiconductor and Storage |
| Series | - |
| Package | Tape & Reel (TR) |
| Product Status | Active |
| Transistor Type | 2 NPN - Pre-Biased (Dual) (Emitter Coupled) |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 47kOhms |
| Resistor - Emitter Base (R2) | 22kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 250μA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | 250MHz |
| Power - Max | 100mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-553 |
| Supplier Device Package | ESV |
| Base Product Number | RN1709 |
Download
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 4000 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
Search