TRANS 2NPN PREBIAS 0.1W ESV | Toshiba Semiconductor and Storage

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 250MHz 100mW Surface Mount ESV

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Unit Price ($ / pc.)
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Available: 501 pcs.
Next delivery: 9471 pcs.
Available in 4 Weeks
Manufacturer Leadtime: **
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Description

The RN1706JE(TE85L,F) is a common industry Bipolar Transistor Arrays, Pre-Biased housed in a RoHS compliant SOT-553 package by Toshiba Semiconductor and Storage made. The RN1706JE(TE85L,F) is using SPQ 4000 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrToshiba Semiconductor and Storage
Series-
PackageCut Tape (CT)
Product StatusActive
Transistor Type2 NPN - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1)4.7kOhms
Resistor - Emitter Base (R2)47kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250μA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV
Base Product NumberRN1706
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 4000 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes