IGBT MODULE | Infineon Technologies
IGBT Module Half Bridge 1200 V 38 A 200 W Chassis Mount Module
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Unit Price ($ / pc.)
17.365 $
*
Available: 171 pcs.
Next delivery: 2541 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
16.49675 $
500 pcs.
15.6285 $
1000 pcs.
14.76025 $
3000 pcs.
13.892 $
10000 pcs.
13.02375 $
*incl. VAT plus
shipping costs
**Subject to prior sale
Description
The BSM25GB120DN2 is a common industry IGBT Modules housed in a RoHS compliant Module package by Infineon Technologies made. The BSM25GB120DN2 is using SPQ 9 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | Infineon Technologies |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
| Current - Collector (Ic) (Max) | 38 A |
| Power - Max | 200 W |
| Vce(on) (Max) @ Vge, Ic | 3V @ 15V, 25A |
| Current - Collector Cutoff (Max) | 800 μA |
| Input Capacitance (Cies) @ Vce | 1.65 nF @ 25 V |
| Input | Standard |
| NTC Thermistor | No |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Chassis Mount |
| Package / Case | Module |
| Supplier Device Package | Module |
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Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 9 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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