IGBT MODULE 650V 40A 300W F2 | onsemi

IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2

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Unit Price ($ / pc.)
$ *
Available: 785 pcs.
Next delivery: 15435 pcs.
Available in 7 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
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500 pcs.
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1000 pcs.
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3000 pcs.
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*incl. VAT plus shipping costs
**Subject to prior sale
Description

The FPF2C110BI07AS2 is a common industry IGBT Modules housed in a RoHS compliant 30-DIP Module package by onsemi made. The FPF2C110BI07AS2 is using SPQ 70 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
Mfronsemi
Series-
PackageTray
Product StatusActive
IGBT Type-
ConfigurationHalf Bridge
Voltage - Collector Emitter Breakdown (Max)650 V
Current - Collector (Ic) (Max)40 A
Power - Max300 W
Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
Current - Collector Cutoff (Max)250 μA
InputStandard
NTC ThermistorYes
Operating Temperature-40°C ~ 150°C
Mounting TypeThrough Hole
Package / Case30-DIP Module
Supplier Device PackageF2
Base Product NumberFPF2C110
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 70 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes