IGBT MODULE 650V 40A 300W F2 | onsemi
IGBT Module Half Bridge 650 V 40 A 300 W Through Hole F2
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Available: 785 pcs.
Next delivery: 15435 pcs.
Manufacturer Leadtime: **
Description
The FPF2C110BI07AS2 is a common industry IGBT Modules housed in a RoHS compliant 30-DIP Module package by onsemi made. The FPF2C110BI07AS2 is using SPQ 70 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com
Technical specifications
| Mfr | onsemi |
| Series | - |
| Package | Tray |
| Product Status | Active |
| IGBT Type | - |
| Configuration | Half Bridge |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
| Current - Collector (Ic) (Max) | 40 A |
| Power - Max | 300 W |
| Vce(on) (Max) @ Vge, Ic | 2.3V @ 15V, 40A |
| Current - Collector Cutoff (Max) | 250 μA |
| Input | Standard |
| NTC Thermistor | Yes |
| Operating Temperature | -40°C ~ 150°C |
| Mounting Type | Through Hole |
| Package / Case | 30-DIP Module |
| Supplier Device Package | F2 |
| Base Product Number | FPF2C110 |
Logistics
| Country of origin | HK |
| Customs tariff number | - |
| Original Packaging | Reel with 70 pieces |
Compliance
| RoHS conform | Yes |
| HTSUS | 8504.40.9580 |
| SVHC free | Yes |
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FPF2C110BI07AS2 ECAD module
FPF2C110BI07AS2 datesheet
FPF2C110BI07AS2 specification
FPF2C110BI07AS2 certificate
FPF2C110BI07AS2 component
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FPF2C110BI07AS2 packaging