IC SRAM 9MBIT HSTL 165FBGA | Micron Technology Inc.

SRAM - Synchronous Memory IC 9Mbit HSTL 133 MHz 3 ns 165-FBGA (13x15)

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MPN: MT54V512H18AF-7.5

ManufacturerMicron Technology Inc.
Innovo Part NO.MT54V512H18AF-7.5_12604233
SeriesQDR
Package / Case165-TBGA
SPQ.22
Moisture Sensitivity LevelMSL 1
CertificateCE, CCC, ROHS
Product StatusAvailable
CategoriesIntegrated Circuits (ICs) >> Memory >> Memory
Technical specifications Download Datasheet
Unit Price ($ / pc.)
6.925 $ *
Available: 176 pcs.
Next delivery: 2646 pcs.
Available in 1 Weeks
Manufacturer Leadtime: **
Quantity
Price per unit*
100 pcs.
6.57875 $
500 pcs.
6.2325 $
1000 pcs.
5.88625 $
3000 pcs.
5.54 $
10000 pcs.
5.19375 $
*incl. VAT plus shipping costs
**Subject to prior sale
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Description
Technical specifications
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Logistics
Compliance
Description

The MT54V512H18AF-7.5 is a common industry Memory housed in a RoHS compliant 165-TBGA package by Micron Technology Inc. made. The MT54V512H18AF-7.5 is using SPQ 22 pieces and MSL1 packing size. Buy new and original item from Innovo Technology distributor, contact by email: sales@hk-innovo.com

Technical specifications
MfrMicron Technology Inc.
SeriesQDR
PackageBulk
Product StatusActive
ProgrammableNot Verified
Memory TypeVolatile
Memory FormatSRAM
TechnologySRAM - Synchronous
Memory Size9Mbit
Memory Organization512K x 18
Memory InterfaceHSTL
Clock Frequency133 MHz
Write Cycle Time - Word, Page-
Access Time3 ns
Voltage - Supply2.4V ~ 2.6V
Operating Temperature-20°C ~ 110°C (TJ)
Mounting TypeSurface Mount
Package / Case165-TBGA
Supplier Device Package165-FBGA (13x15)
Logistics
Country of originHK
Customs tariff number-
Original PackagingReel with 22 pieces
Compliance
RoHS conformYes
HTSUS8504.40.9580
SVHC freeYes